| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795898 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
Strong surface inversion usually leads to deceptive Hall measurements by reflecting typical n-type behaviour for p-type samples, especially at low acceptor concentrations. A two-layer model is presented which can potentially be used to separate the bulk semiconducting properties from those of the surface layer. We here apply this model to two materials, InAs and InAsSb, and extract their transport properties.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Krug, L. Botha, P. Shamba, T.R. Baisitse, A. Venter, J.A.A. Engelbrecht, J.R. Botha,