| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795910 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
The high-speed growth of AlGaN by high-temperature metalorganic vapor phase epitaxy was investigated. The alloy composition and growth rate can be predicted by thermodynamical analysis. Crack-free thick AlGaN with an atomically flat surface can be grown.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
N. Kato, S. Sato, T. Sumii, N. Fujimoto, N. Okada, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi, A. Bandoh,