Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1795921 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Epitaxial lateral overgrowth (ELO) of high-quality AlN layers on trench-patterned AlN underlying layers has been demonstrated by high-temperature metal-organic vapor phase epitaxy. Under optimized conditions, a high growth rate and an atomically flat surface of thick ELO-AlN without cracks were obtained. Fully coalesced ELO-AlN epilayers were obtained on AlN templates having 〈101¯0〉 trenches. AlN grown above the groove had low dislocation density due to filtration caused by the grooves. In addition, most of the dislocations threading from the AlN template were annihilated by the formation of a loop structure during growth with increasing thickness of AlN. The average dislocation density of the ELO-AlN was calculated to be 4×107 cm−2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Masataka Imura, Kiyotaka Nakano, Gou Narita, Naoki Fujimoto, Narihito Okada, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Tadashi Noro, Takashi Takagi, Akira Bandoh,