Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements.