Microstructure in nonpolar m-plane GaN and AlGaN films

A microstructural analysis of m-plane GaN and AlGaN layers grown by metal-organic vapor phase epitaxy using the epitaxial lateral overgrowth method was carried out. It was difficult to reduce stacking fault density when stripes were formed along the 〈0 0 0 1〉 direction, which implies that stacking faults originate from c  -plane slip. In the case of stripes along the, 〈112¯0〉 directions, both stacking fault and threading dislocation densities can be reduced.