Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg

The first trial of Mg doping in the atmospheric-pressure MOVPE growth of InN has been made using CP2Mg as a Mg source. Although Mg is incorporated in the InN films and its content is proportional to CP2Mg/TMI molar ratio, all samples grown here show n-type conduction and the electron concentration is rather increased with increasing CP2Mg/TMI molar ratio. The SIMS analysis reveals that C and H are also incorporated into the grown films. The AFM observation shows that the grain growth of InN is suppressed by the CP2Mg supply. Both the contamination of C and H and the effect of the CP2Mg supply to the grain growth are considerably reduced by selecting the substrate position on the susceptor.