| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1795969 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
Transmission electron microscopy has been used to characterize the microstructure of HgTe/CdTe superlattices (SLs) grown by molecular beam epitaxy on CdZnTe(2 1 1) B substrates. The purpose of these intermediate layers was to improve the quality of subsequent HgCdTe (MCT) epilayers intended for infrared detectors. The observations confirmed that the SLs smoothed out the surface roughness of the substrate, and showed that threading dislocations were prevented from reaching the MCT epilayers. High-quality growth of MCT on CdZnTe using the HgTe/CdTe interfacial layers has been demonstrated.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Changzhen Wang, Xiaojin Wang, Jun Zhao, Yong Chang, Christoph H. Grein, Sivalingam Sivananthan, David J. Smith,