Theoretical approach to initial growth kinetics of GaN on GaN(0 0 1)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(0 0 1)-(4×1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption–desorption transition temperature and transition beam equivalent pressures on the GaAs(0 0 1)-(4×2)β2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(0 0 1)-(4×1). That is, in the initial growth stage of c-GaN on GaN(0 0 1)-(4×1), a N-adsorbed structure is formed and then Ga adsorbs on the N adatom.