| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796002 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Photoluminescence (PL) spectra of GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy (MOVPE) were observed at temperatures from RT to 500Â K. The spectra include the near-band-edge emission (NBE) and yellow luminescence (YL). The peak energy of the NBE is shifted towards lower energy with increasing observed temperature. UV light-emitting diodes (LEDs) utilizing band-gap narrowing due to thermal effects are proposed and their advantages for integration are discussed.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Tohru Honda, Toshiaki Kobayashi, Shinichi Egawa, Masaru Sawada, Koichi Sugimoto, Taichi Baba,