Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796004 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1−xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the AlxGa1−xN barrier of 27.7±0.1%, AlxGa1−xN barrier thickness of 25 nm±4%, sheet carrier density of 1.05×1013 cm−2±4%, pinch-off voltage of −5.3 V±3%, and sheet resistance of 449 Ω±1%.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Kakanakova-Georgieva, U. Forsberg, I.G. Ivanov, E. Janzén,