Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796018 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Growth of thick AlxGa1âxN ternary alloy using AlCl3 and GaCl gases as group III precursors was performed by hydride vapor-phase epitaxy (HVPE). C-axis-oriented AlGaN layers could be grown at 1100 °C. It was found that the growth of AlxGa1âxN by HVPE was affected by the presence of H2 in the carrier gas. Therefore, the solid composition x in AlxGa1âxN ternary alloy could be controlled by changing the input Al mole ratio of the group III precursor (RAl) and/or the low range (<10%) of partial pressure of hydrogen (H2) in the carrier gas (Fo). The growth rate of approximately 30 μm/h was obtained under inert carrier gas (Fo=0.0), while the growth rate decreased rapidly in the low RAl under a low partial pressure of H2 in the carrier gas (Fo=0.1). These results are in good agreement with the thermodynamic prospect. Thus, the growth of AlxGa1âxN using HVPE is thermodynamically controlled.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Takayoshi Yamane, Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu,