Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers

The influence of GaSb substrate surface defects such as native oxides on the crystalline quality of epitaxial layers was investigated using transmission electron microscopy (TEM). Cross-sectional TEM imaging showed that there are discrete defects at the GaSb-substrate/epilayer interface. Secondary ion mass spectroscopy (SIMS) results revealed high oxygen concentration at the interface, indicating that the defects are likely oxides and presumed to be native oxides since other impurities were not detected. High-resolution TEM micrographs showed that the subsequent growth of the epilayer continues beyond the defects without any additional defect generation or propagation. Tellurium-doped AlGaAsSb epitaxial layers were grown lattice-matched on GaSb substrates and lattice-mismatched on semi-insulating GaAs substrates by organometallic vapor phase epitaxy. SIMS and Hall data showed that the ratio of carrier concentration to Te concentration decreases significantly when the carrier concentration increases from 2.5×1017 to 6.5×1017 cm−3. TEM imaging showed that the material with heavily doped Te generates a high density (about 108 cm2) of planar defects (stacking fault) located on (1 1 1) planes. Most of the Te-related defects originate at the GaSb buffer layer/AlGaAsSb epilayer interface. In addition, discrete precipitates were observed in the heavily doped AlGaAsSb layer.