Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796069 | Journal of Crystal Growth | 2006 | 6 Pages |
Abstract
A series of low-pressure chemical vapor deposition experiments and gas-surface chemical kinetic simulations have been carried out to achieve significant reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(1Â 0Â 0) substrates. A two-step epitaxial process, consisting of a nucleation stage and a subsequent epitaxial stage, was newly proposed by comparisons between experimental results and numerical predictions. The twin formation was successfully suppressed under the growth conditions of the nucleation stage leading to a relative flux ratio of C to Si larger than 56 on the deposition surface. The surface protrusion density was decreased from 7.5Ã106 to 6.5Ã104Â cmâ2 when the conventional carbonization process was replaced with the proposed nucleation stage.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jungheum Yun, Tetsuo Takahashi, Takeshi Mitani, Yuuki Ishida, Hajime Okumura,