Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796143 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
This work presents the selective growth of three-dimensional metallic gallium nitride structures on silicon substrates by chemical beam epitaxy (CBE) with a subsequent plasma nitridation process. The use of titanium pre-deposited stripes over silicon (1 0 0) is shown to provide high selectivity where spherical and semi-spherical structures are obtained only over the metal. These structures have diameters ranging from 100 nm to 3 μm depending on the growth conditions. The nitridation process was performed on an electron cyclotron resonance (ECR) plasma system. Raman micro-spectroscopy results showed GaN formation with zinc blend crystal structure and photoluminescence emission in the visible spectrum in a range between 350 and 650 nm.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.A.M. Barea, A.A.G. von Zuben, A.Z. Márquez, N.C. Frateschi,