| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796165 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Single crystals of CuInS2 have been grown by chemical vapour transport (CVT) technique. The stoichiometric composition and the lattice parameter determination of the grown crystals were done by energy dispersive analysis of X-rays (EDAX) and X-ray diffraction (XRD) techniques, respectively. The detailed surface microtopographic study of the as-grown crystals showed that they grow by a lateral layer mechanism. Using the phase diagram of differential thermal analysis (DTA) and thermogravimetric analysis (TGA) in open air, the stability of CuInS2 has been shown at high temperature.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sunil H. Chaki, Ajay Agarwal,