Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796188 | Journal of Crystal Growth | 2006 | 6 Pages |
Abstract
The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical absorption spectra show a broad range of apparent band-gap values from approximately 2.3–0.9 eV, depending on the growth temperature. The influence of growth temperature on crystallinity, level of impurity incorporation, stoichiometry, and lattice distortion are analysed. The possible causes of the apparent band-gap shift in indium nitride are discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Patrick P.-T. Chen, K. Scott A. Butcher, Marie Wintrebert-Fouquet, Richard Wuhrer, Matthew R. Phillips, Kathryn. E. Prince, Heiko Timmers, Santosh K. Shrestha, Brian F. Usher,