Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796196 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III–V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K.T. Tsen, C. Poweleit, D.K. Ferry, Hai Lu, William J. Schaff,