Article ID Journal Published Year Pages File Type
1796212 Journal of Crystal Growth 2006 4 Pages PDF
Abstract

Micropipe free c-plane 4H–SiC wafers were achieved by sublimation growth on the 4H–SiC {033¯8} seed. 4H–SiC {033¯8} seeds were obtained by inclining the c  -plane to 〈011¯0〉 at 54.7°. A transmission X-ray topograph of the micropipe free c-plane wafer revealed that there were no macroscopic defects with lattice displacements. Crystal growth of undoped (vanadium-free) semi-insulating 6H–SiC was carried out by our sublimation system. In order to achieve high resistivity, high-purity SiC source and controlled instruments were used for the reduction of nitrogen, boron and metal impurity backgrounds. Hence high-purity and high-resistivity 6H–SiC 2 and 3 in in diameter were developed for high-frequency power transistors.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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