Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796233 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
We have grown low-resistive and n-type β-FeSi2 single crystals by the temperature gradient solution growth (TGSG) method using Ni-doped Zn solvent. These crystals were obtained at the Ni concentrations between 0.05 and 0.5 wt%. Above the Ni concentration of 1.0 wt%, nickel silicides were preferably grown. The resisitivity of the Ni-doped crystals was 0.2-0.5 Ω cm at room temperature (RT). The electron concentration and Hall mobility at RT were (5-6)Ã1018 cmâ3 and 3-6 cm2/V s, respectively. We also determined the ionization energy of 26-60 meV for the Ni impurity in β-FeSi2.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Haruhiko Udono, Yuta Aoki, Hirokazu Suzuki, Isao Kikuma,