Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796238 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
We have investigated magneto-optical properties of a series of CdSe self-assembled quantum dots (QDs) grown on the Zn1âxMnxSe diluted magnetic semiconductors (DMSs). The QDs are formed by depositing 2.5 ML CdSe layer on 1 μm thick Zn1âxMnxSe buffer layer prepared by molecular beam epitaxy (MBE). The Mn concentration x in the Zn1âxMnxSe buffer was varied from 0.05 to 0.25. The photoluminescence (PL) peaks from CdSe QDs and from Zn1âxMnxSe barrier are clearly observed at zero magnetic field. The PL position of CdSe QDs appears to be systematically shifted toward low energy with increasing Mn concentration in the Zn1âxMnxSe buffer layer. The PL intensity ratio of CdSe QDs with respect to the Zn1âxMnxSe barrier also monotonically increases with Mn concentration x. This systematic behavior observed in the series of CdSe/Zn1âxMnxSe QD systems indicates that the CdSe QD formation strongly depends on the Mn concentration of the Zn1âxMnxSe buffer layer. The observed large Zeeman shift of the QD system in the presence of magnetic field was discussed in terms of the wavefunction overlap of carriers with Mn ions in the barrier.
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Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Lee, M. Dobrowolska, J.K. Furdyna,