Article ID Journal Published Year Pages File Type
1796265 Journal of Crystal Growth 2006 4 Pages PDF
Abstract

A room-temperature direct-bonding method for various crystal substrates including semiconductors and oxides has been developed. In this method, the surfaces of two wafers are sputter etched by Ar ion beam and bonded in high vacuum. This method is called the surface-activated bonding (SAB). It is suitable for the bonding between different materials and fabrication of integrated substrates, because the process is free from the problems of thermal expansion mismatch. Such integrated substrates are expected to improve various microdevices and allow realization of new devices.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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