| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796309 | Journal of Crystal Growth | 2007 | 7 Pages |
Abstract
Tin selenide thin films were grown by flash evaporation method at substrate temperatures, TS=303–513 K at an interval of 30 K. Single phase, nearly stoichiometric and polycrystalline films with strong (4 0 0) orientation exhibiting orthorhombic structure was observed at the substrate temperature of 513 K. The optical absorption studies indicated a direct band gap of 1.26 eV with high absorption coefficient (>104 cm−1) near the fundamental absorption edge. The films were found to have an electrical resistivity 8.1 Ω cm with p-type conduction.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G. Hema Chandra, J. Naveen Kumar, N. Madhusudhana Rao, S. Uthanna,