Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796310 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN ã11¯00ã direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {112¯n} facets (nâ1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
L.E. Rodak, K.R. Kasarla, D. Korakakis,