Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796327 | Journal of Crystal Growth | 2007 | 8 Pages |
Abstract
The effect of a static magnetic field on silicon dissolution into the germanium melt has been experimentally investigated. The experiments in this study show a trend to higher dissolution in the presence of an applied magnetic field. This can be attributed to the flow structure of the melt. The dissolution interface showed improved stability compared with experiments conducted without an applied field. The homogeneity of the dissolved silicon in the melt was reduced. Areas of low silicon concentration were present in the melt. Despite this, more silicon was dissolved into the melt with a static magnetic field applied than in experiments without an applied magnetic field.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Neil Armour, Sadik Dost,