Article ID Journal Published Year Pages File Type
1796327 Journal of Crystal Growth 2007 8 Pages PDF
Abstract
The effect of a static magnetic field on silicon dissolution into the germanium melt has been experimentally investigated. The experiments in this study show a trend to higher dissolution in the presence of an applied magnetic field. This can be attributed to the flow structure of the melt. The dissolution interface showed improved stability compared with experiments conducted without an applied field. The homogeneity of the dissolved silicon in the melt was reduced. Areas of low silicon concentration were present in the melt. Despite this, more silicon was dissolved into the melt with a static magnetic field applied than in experiments without an applied magnetic field.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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