| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796343 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
Zinc oxide (ZnO) thin films were grown on the β-Ga2O3 (1 0 0) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Ω cm at room temperature. Thus, β-Ga2O3 (1 0 0) substrate is shown to be a suitable substrate for fabricating ZnO film.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jungang Zhang, Bin Li, Changtai Xia, Qun Deng, Jun Xu, Guangqing Pei, Feng Wu, Yongqing Wu, Hongsheng Shi, Wusheng Xu, Zhaohui Yang,