As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets

p-Type ZnO:As films with hole concentration of 1016–1017 cm−3 were deposited on glass substrates by cosputtering method with ZnO and Zn3As2 targets. Proper annealing may change the conduction type of ZnO:As film. Ohmic contacts were established between Ti electrodes and ZnO films. X-ray photoelectron spectroscopy (XPS) showed that the bonding state of As in ZnO:As film was in its oxidization state. The optical band gap of the ZnO films blueshifted from 3.22 to 3.34 eV in our experiment. Our results not only demonstrated a new approach to obtain p-type ZnO films but also helped to understand the microscopic structure of As in As-doped ZnO.