| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796399 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
The dramatic effect of incorporating a small amount of nitrogen into Ga(In)As and Ga(In)P on their materials properties, such as effective mass, band alignment, and band structure, is summarized.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.W. Tu, W.M. Chen, I.A. Buyanova, J.S. Hwang,