| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796400 | Journal of Crystal Growth | 2006 | 6 Pages |
Abstract
It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 μm with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 °C with a short duration of 10 s is suggested for optimizing the annealing effect.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
De-Sheng Jiang, Yu-Hua Qu, Hai-Qiao Ni, Dong-Hai Wu, Ying-Qiang Xu, Zhi-Chuan Niu,