Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796401 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
We study the depth-dependent variation of optical property beyond the critical thickness in an InGaN thin film. In the sample, both free-carrier and localized-state recombination activities are observed. The emission peak corresponding to the localized states in photoluminescence (PL) measurement becomes more prominent with increasing sample depth, implying stronger clustering in the deeper layers. Although the PL spectral peak variation is weak, that of cathodoluminescence (CL), corresponding to the activities of the localized states, shows a clear red shift trend with depth. The red shift trend is attributed to the stronger clustering behavior and possibly stronger quantum-confined Stark effect in the nano-clusters, which is due to the residual strain beyond the critical thickness, in a deeper layer.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chih-Chung Teng, Hsiang-Chen Wang, Tsung-Yi Tang, Yen-Cheng Lu, Yung-Chen Cheng, C.C. Yang, Kung-Jen Ma, Wei-Ming Wang, Chi-Wei Hsu, L.C. Chen,