| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796411 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
In this paper, we report experimental results regarding highly strained InP and InAs/InP quantum nanostructures grown on vicinal GaAs (0 0 1) substrate with 7° miscut towards (1 1 0) orientation by MOCVD using TBA and TBP as group V sources. Formation of well-aligned wire nanostructures has been observed, which may be attributed to the effects of multi-atomic steps formed during GaAs buffer layer growth. We also observed strong photoluminescence from these nanostructures even for the type II band gap alignment of the InP/GaAs quantum wires. Our results show a possible way for fabricating low-dimensional quantum nanostructures with band gap engineering.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Benzhong Wang, Soo-Jin Chua, Jianrong Dong, Yanjun Wang,