Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796456 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.
Related Topics
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Condensed Matter Physics
Authors
T.W. Kim, H.S. Lee, J.Y. Lee, H.C. Jeon, T.W. Kang,