Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796526 | Journal of Crystal Growth | 2007 | 8 Pages |
Abstract
A modeling of reaction pathways in a TMAl/NH3/H2 system including parasitic and polymeric reactions for computational simulations was constructed to study temperature and pressure dependences of growth rates and gas-phase chemistry in metalorganic vapor-phase epitaxial growth of AlN. AlN growth rates calculated were in good agreement with experimental data. Reactive molecules such as MMAlNH and Al–N became the major gas-phase species at the high-temperature range. With increasing pressure, the polymerization of these species was enhanced and AlN growth rate significantly decreased.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Takeshi Uchida, Kazuhide Kusakabe, Kazuhiro Ohkawa,