Chemical solution deposition and transport properties of Ag-doped manganite films

The preparing technique of chemical solution deposition (CSD) for La0.85Ag0.15MnO3 and La0.85Ag0.1MnO3 colossal magnetoresistance (CMR) film is investigated. Polycrystalline-like La0.85Ag0.15MnO3 films are obtained on LaAlO3 (h 0 0) and YSZ (h 0 0) single-crystal substrates as a seed layer is not utilized. However, as a seed layer is used, an epitaxial-like La0.85Ag0.1MnO3 film can be successfully fabricated on LaAlO3 (h 0 0) single-crystal substrate. XRD shows that Ag atoms can substitute La atoms without forming any second phases. The magneto-transport property measurement shows that the polycrystalline-like La0.85Ag0.15MnO3 and the epitaxial-like La0.85Ag0.10MnO3 films behave as CMR effect in the whole temperature region below metal–insulator transition (Tp) and in the vicinity of Tp, respectively. The results indicate that the CSD method is a worthwhile technique for preparing manganite CMR films with tuning grain orientations.