Article ID Journal Published Year Pages File Type
1796599 Journal of Crystal Growth 2006 4 Pages PDF
Abstract

We present a study on the high performance p-type AlxGa1−x  N (x=0.35x=0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the AlxGa1−x  N (x=0.35x=0.35) alloy is investigated. From the Hall effect and I–V transmission line model measurements, a p-type resistivity of 3.5 Ω cm for AlxGa1−x  N (x=0.35x=0.35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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