Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796601 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH3/H2 system, including the formation of polymers such as [Ga–N]n and [MMGaNH]n (n=2–6). It was found that Ga–N polymers are generated at a temperature region about 700 K, and that the temperature is the boundary between [Ga–N]2 dissociation ([Ga–N]2→Ga–N) and Ga–N polymerization (such as [Ga–N]2→[Ga–N]3–6).
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Akira Hirako, Kazuhiro Ohkawa,