Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796658 | Journal of Crystal Growth | 2006 | 9 Pages |
Abstract
Growth of gallium phosphide layer on silicon substrate has been carried out using metal-organic vapor phase epitaxy. Epitaxial layers were grown at 845 °C with a V/III ratio of 100 and a growth rate of 1.7 Ã
 sâ1at a reactor pressure of 30 mbar. The nominal thickness of the gallium phosphide epitaxial layer is â¼600 nm as measured by cross-sectional scanning electron microscopy. Growth of gallium phosphide epilayer is confirmed by Raman spectra studies. High-resolution X-ray diffraction studies show that the epilayer is of single crystalline nature and structurally coherent with silicon substrate. It is also inferred from these measurements that the in- and out of plane strain arising from small mismatch confirms a relaxed epilayer. As-grown epilayer shows p-type behavior with a hole carrier density of â¼1.2Ã1018cmâ3 and hole mobility 114 cmâ2V sâ1 at room temperature. Annealing at 550 °C for 10 min shows significant improvements in crystalline quality of the epilayer. The annealed layer shows a reduced hole density (â¼6.7Ã1017cmâ3) and increased hole mobility (155 cmâ2 V sâ1).
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
V.K. Dixit, Tapas Ganguli, T.K. Sharma, Ravi Kumar, S. Porwal, Vijay Shukla, Alka Ingale, Pragya Tiwari, A.K. Nath,