Growth and optoelectronic characteristic of n-Si/p-CuIn(S1−xSex)2 thin-film solar cell by solution growth technique

The p-CuIn(S1−xSex)2 (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 °C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S1−xSex)2 thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S1−xSex)2 (x=0.5x=0.5) reveals (1 1 2) orientation peak and exhibits the chalcopyrite structure with lattice constant a=5.28Å and c=11.45Å. The J–V   characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, Voc=411.09mV, and Jsc=14.55mA/cm2. FF=46.55% and η=4.64%η=4.64% under an illumination of 60 mW/cm2. The J–V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S0.5Se0.5)2 heterojunction thin film.