Selective growth of high quality InAs quantum dots in narrow regions using in situ mask

We have succeeded in selective formation of a self-assembled InAs quantum dot (QD) structure in a narrow region. The emission wavelength of the QDs was varied locally by a covered GaInAs layer grown with an in situ mask. This mask can be fitted to the sample holder and removed in an ultra-high-vacuum environment. The selectively grown QDs exhibited high optical quality with a photoluminescence peak at 1.29 μm and linewidth of 24 meV at room temperature. This technique provides greater latitude and design flexibility in fabricating optoelectronic and electronic devices with QD structures.