TiS2 whisker growth by a simple vapor-deposition method

We reported the synthesis of titanium disulfide (TiS2) whiskers on Ni-coated Si wafer via a simple vapor transport deposition method at 630 °C. To our knowledge, this is the first time to report the synthesis of TiS2 whiskers with exact stoichiometric composition. By gently controlling the configuration of S and Ti sources and Si substrate during vapor reaction, TiS2 whiskers could be successfully acquired. TiS2 whiskers are single crystalline with exact stoichiometric composition. This kind of solid sulfide source method also can be used for synthesis of other transitional metal dichalcogenide whiskers. We believe that the successful growth of TiS2 whiskers would provide significant theoretical and experimental opportunities for researchers.