SiC film formation from fluorosilane gas by plasma CVD

SiC films were formed from SiF4 and CH4 reactions using microwave-plasma CVD. 3C-SiC films with high crystallinity and crystalline size were formed at 1023 K under constant flow rates of SiF4, CH4, and H2. The film grows linearly with time and the temperature dependence of the growth rate was minimal at 723–1173 K. Increase in the flow rate of SiF4 and CH4 decreased the crystallinity and crystalline size. Porous film formation along with carbon deposition occurred due to the high CH4 flow rate. H2 addition remarkably increased both the crystallinity and crystalline size.