| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796754 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
Si nanocrystals (Si nc) were formed by the implantation of Si+ into a SiO2 film followed by high-temperature annealing. The microstructural evolution of Si nc with annealing time has been investigated by high-resolution transmission electron microscopy (HRTEM) in detail. Three evident growth phases have been observed: formation of amorphous Si-rich SiOx nodules; transformation of the amorphous nodules into Si nc and coalescence of small particles into larger ones. Based on the HRTEM results, a formation mechanism has been proposed for the Si nc embedded in SiO2.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.Q. Wang, R. Smirani, G.G. Ross,