Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796778 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
Highly c-axis-oriented ZnO films were successfully deposited on the nucleation sides of freestanding diamond films by RF reactive magnetron sputtering. I–V characteristics of ultraviolet (UV) photodetectors with ZnO/diamond structure were studied and a significant photoresponse was observed under UV light illumination. The dark-current and the photocurrent of the ZnO photodetectors were relative to the grain size and the quality of ZnO films. For the photodetector with a bigger grain size, a weaker dark current and a stronger photocurrent were obtained under 10 V bias voltage. The photocurrent rise and decay process confirmed the carrier-trapping effect.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jian Min Liu, Yi Ben Xia, Lin Jun Wang, Qing Feng Su, Wei Min Shi,