Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796781 | Journal of Crystal Growth | 2007 | 6 Pages |
Abstract
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
I. Tsiaoussis, N. Frangis, C. Manolikas, T.A. Nguyen Tan,