Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796785 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
This paper investigates preparation of CaSeS thin films using hot-wall epitaxy. These films can be grown epitaxially on cleaved BaF2(1Â 1Â 1) at a substrate temperature of 873Â K by tailoring the VI/II flux ratio vaporized from Ca and SeS resources. The optical absorption edge of these films thus tailored can be observed clearly, shifting toward higher photon energy with increasing S content. In particular, the energy band gap of CaSe0.66S0.34, capable of lattice-matching to InP was found to be 4.69Â eV, producing considerably large band gap difference of 3.34Â eV between the CaSe0.66S0.34 and InP.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Seishi Abe, Katashi Masumoto,