Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796809 | Journal of Crystal Growth | 2007 | 4 Pages |
Abstract
Titanium oxide (TiO2) films were deposited on silicon substrates at the temperature in the range 50–600 °C by DC reactive magnetron sputtering. It was found that the anatase and rutile phases co-existed in the TiO2 films deposited at 450–500 °C, while only the anatase phase existed in those deposited at other temperatures. The mechanism of such a crystallization behavior of TiO2 films is preliminarily explained.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yuanyuan Zhang, Xiangyang Ma, Peiliang Chen, Deren Yang,