Article ID Journal Published Year Pages File Type
1796809 Journal of Crystal Growth 2007 4 Pages PDF
Abstract

Titanium oxide (TiO2) films were deposited on silicon substrates at the temperature in the range 50–600 °C by DC reactive magnetron sputtering. It was found that the anatase and rutile phases co-existed in the TiO2 films deposited at 450–500 °C, while only the anatase phase existed in those deposited at other temperatures. The mechanism of such a crystallization behavior of TiO2 films is preliminarily explained.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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