Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796843 | Journal of Crystal Growth | 2006 | 4 Pages |
Abstract
Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strains. The spectra show two structures at â3.37Â eV corresponding to the A-free exciton transition and at â3.38Â eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy ELT for the A-excitons is characterized by a negatively peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo,