| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1796864 | Journal of Crystal Growth | 2006 | 5 Pages |
Abstract
The samples with the Mn concentrations of 0.290% and 0.062% revealed that both in the calculated diffraction pattern and experimental pattern of transmission electron microscopy (TEM), the FCC lattice was still maintained after the Mn doping. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. Ferromagnetic semiconductor of Tc between 100 and 200 K demonstrated by TEM and AHE can be formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yoon Shon, H.C. Jeon, Sejoon Lee, S.-W. Lee, D.Y. Kim, T.W. Kang, Eun Kyu Kim, Chong S. Yoon, C.K. Kim, Y.J. Park, Yongmin Kim, J.M. Baik, J.L. Lee,