Epitaxial growth of 4H–SiC on 4° off-axis (0 0 0 1) and (0 0 0 1¯) substrates by hot-wall chemical vapor deposition

Homoepitaxial layers of 4H–SiC have been grown on 4° off-axis (0 0 0 1) and (0 0 0 1¯) substrates under various growth conditions by horizontal hot-wall chemical vapor deposition. On the (0 0 0 1) epilayers, macroscopic step bunching has been significantly enhanced under C-rich condition. On the other hand, on the (0 0 0 1¯) C-face, epilayers without macroscopic step bunching could be grown with a wide range of C/Si ratio at 1600 °C. The C/Si ratio dependence of background doping concentration of epilayers on the (0 0 0 1¯) C-face clearly showed site-competition behavior, and a lowest background doping of 4.4×1014 cm−3 could be attained by low pressure growth at 35 Torr.