Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796942 | Journal of Crystal Growth | 2006 | 15 Pages |
Abstract
Examination of published sessile-drop results for liquid metals and semiconductors on silica revealed that W and Ïsv were highest for reactive melts, in which SiO2 dissolves. For non-reactive melts, W and Ïsv were lower and θ higher in a gas than in a vacuum, regardless of whether the experiments had been carried out in sealed ampoules, a flowing gas, or dynamic vacuum. The implication is that the surface of silica was different in a vacuum than in a gas at â¼1 bar.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Arun K. Kota, Gaurav Anand, Suresh Ramakrishnan, Liya L. Regel, William R. Wilcox,