Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1796962 | Journal of Crystal Growth | 2006 | 5 Pages |
CdTe(2 1 1)B epilayers were grown on 3 in Si(2 1 1) substrates which misoriented 0–10° toward [1 1 1] by molecular beam epitaxy (MBE). The relationship of X-ray double-crystal rocking curve (XRDCRC) FWHM and deflection angle from CdTe(2 1 1) to Si(2 1 1) was studied. For 4.2–4.5 μm CdTe, the best value of FWHM 83 arcsec was achieved while deflection angle is 2.76°. A FWHM wafer mapping indicated a good crystalline uniformity of 7.4 μm CdTe on tilting Si(2 1 1), with FWHM range of 60–72 arcsec. The shear strains of these epilayers were analyzed, using reciprocal lattice points of symmetric and asymmetric reflections measured by high-resolution multi-crystal multi-reflection X-ray diffractometer (HRMCMRXD). It was found that the shear strain angle γ(011¯) of epilayer is effectively reduced by using proper tilting Si(2 1 1) substrate. It was also proved that the lattice parameter of CdTe(2 1 1)B is affected by the shear strain and thermal strain.